Project R-6627

Hole transport in n-type CVD diamond under high injection current in pseudo-vertical MOSFET. (Research)

Throughout the ages diamond has fascinated people, and relatively recently, research has enabled scientists to grow diamond in the laboratory. When impurities, like boron or phosphorus, are introduced into the lattice during the growth, diamond becomes electrically conductive. Phosphorus is a challenging dopant, turning diamond into an n-type semiconductor where electrons are the majority charge carriers. However, in the case of metal-oxide-semiconductor field-effect transistors (MOSFETs), the n-type layer is inverted by an electric field, and thus the holes are transporting the charge. With the achievement of high quality n-type diamond, an opportunity to probe extreme physics with this exceptional material has become possible. Many fundamental questions are waiting to be answered, which can now be explored due to the unique characteristics of diamond. One of the most interesting properties is diamond's resistance to high power conditions. This project aims to understand the fundamental behavior of holes in the inversion region of n-type diamond under high electric fields and injection currents. Up to now, there have been no demonstrations or fundamental investigations of such a case. Thus, this is definitely a promising unexplored area with significant potential for fascinating results.

01 January 2016 - 31 December 2017