Project R-8243

Development of near-infrared organic photodetectors based on innovative donor and acceptor materials (Research)

Due to their application in night and thermal vision systems, infrared image sensors are truly imaginative. To date, they are produced via the so-called hybrid technology, in which both the detector and the electronic readout are prepared separately and then interconnected at the pixel level. Obviously, this is a time-consuming process, resulting in low throughput and thus high cost, limiting widespread use. A monolithic approach with direct deposition of the detectors on top of the electronic readout can provide a solution. However, attempts to apply this technology to the current inorganic low bandgap absorbers were not very successful because of compatibility issues. In this respect, organic semiconductors are more attractive since they are compatible with almost all surfaces. For UV-Vis light detection, it has already been proven that organic photodetectors (OPD's) can match and even surpass the performance of state of the art inorganic photodetectors. Unfortunately, organic materials generally show limited absorption in the near-infrared (NIR). In this project, we aim at a noteworthy contribution to the development of NIR-OPD's by fundamental scientific studies on the photoactive materials (both p- and n-type) required for this technology. Furthermore, particular attention will be paid to the design of a suitable device architecture, which allows the preparation of NIR-OPD's with a performance comparable to (or even surpassing) the present inorganic technology.

01 October 2017 - 30 September 2020