Project R-1301
Title
High kappa metaloxides for IC applications CSD deposition & characterization of MIM and MOS - structures (Research)
Abstract
Microprocessors are more and more reduced as in Moore's law. Because of that MOSFET, its most important component, is reduced as well. Attempts are made to also increase the DRAMcapacity and simultaneously the reducing of the thickness of the dielectric layer. The SiO2 that was used as dielectricum (k=3,9) had very good properties for this application.
Period of project
01 January 2008 - 31 December 2011