Project R-12116

Investigation of the interface formed between polycrystalline diamond and wide band gap semiconductors- silicon carbide and gallium nitride (Research)

The research proposed involves the investigation of interface formed between polycrystalline diamond (PCD) films with two common wide band gap materials- silicon carbide (SiC) and gallium nitride (GaN). It is proposed that PCD films are appropriate for use in passivation and thermal management of SiC/GaN devices. However, a fundamental study of the interface formed between them, and its correlation with the material properties of the PCD films, is lacking. The novel nucleation procedure will be used in conjunction with the linear antenna chemical vapour deposition to achieve direct growth of PCD films on epitaxial SiC and GaN, with good quality nucleation surfaces. These films will undergo material characterization (spectroscopy and electron microscopy) and the interface will be probed using several non-destructive techniques. The aim of the investigation is to evaluate the value added by PCD to WBG device designs. By correlating material properties of the films (thickness, grain size etc.) to defect/trap densities at the interface, will help evaluate the effectiveness of the addition of the PCD for passivation and thermal management.

01 January 2022 - 01 January 2022