Project R-15266

Next-generation high-efficiency triple junction solar cells based on perovskites and silicon (Research)

The most promising and fast-evolving way to go beyond the Shockley-Queisser efficiency limit is the multi-junction solar cell structures. In this PhD project, perovskite/perovskite/silicon triple-junction solar cell structure, the next-to-next generation PV technology with the capacity of device efficiencies of up to 49%, will be studied in detail. Starting with the optical modelling of the device, the appropriate parameters such as bandgap and thickness, as well as the surface morphology of the bottom cell will be determined. According to the desired properties, the perovskite for the top cell, with a bandgap between 1.8 and 2.0 eV, will be developed by adjusting the Br content in the composition. The stability issues, such as light-induced halide segregation that rises due to high Br contents, will be tackled by additive engineering, which will serve purposes like grain size enlargement and grain boundary passivation. Following, the processing of the top perovskite on the middle one will be carefully developed to avoid damaging the middle absorber. A hybrid deposition method that combines thermal and solvent-based deposition will be used for depositing the perovskite as it is a very promising approach that can tackle middle cell damage during deposition. Finally, all the sub-cells and the interlayers will be fully integrated to achieve the final device structure on an area of 1 cm2 with a high stability and efficiency of >35%.

01 November 2024 - 31 October 2028