Project R-2008

Influence of plasma-conditions on the growth of thick, freestanding (100) diamond layers as studied by Time-Of-Flight. (Research)

The main objective of this project is to study the growth and electrical transport properties of detached, (100) oriented CVD diamond layers and the influence of the diamond surface on these processes. More precisely, the growth will focus on high growth rates of undoped diamond layers. The influence of the substrate orientation, plasma treatment on growth and plasma conditions will be investigated. Furthermore, when the grown layers are created by detaching the layers from their substrate to retrieve, electrical characterization will be done by the Time-of-Flight (TOF) technique to clarify the electrical transport properties of these detached CVD layers, followed by a comparison with commercially available IIa and CVD diamond layers with natural IIa diamond. The ultimate goals of this project are the influence of plasma treatment before and after growth and the contact configuration studied by Time-of-Flight.

01 October 2009 - 30 September 2012