Project R-4523

Interface characterization of CVD diamond/diamond:B multilayers for charge particle detection (Research)

The goal of this project is the study of interface properties of multilayers consisting of intrinsic CVD diamond separated by CVD diamond doped with B, deposited either in two separate CVD processes or doped by B implantation after CVD synthesis. Interface between substrate and deposited in CVD process diamond layer has significant influence on the quality of diamond film. Boron doped layer not only influences the quality of next deposited intrinsic diamond film but also introduces into diamond structure crystalline disorder and determination of its character and range will help to improve the electronic structure performance.

01 January 2013 - 31 December 2015